ACE3401 查看數據表（PDF） - ACE Technology Co., LTD.
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ACE3401 Datasheet PDF : 7 Pages
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ACE3401
P-Channel Enhancement Mode MOSFET
Description
The ACE3401 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.
Features
-30V/-4.0A, RDS(ON)=55mΩ@VGS=-10V
-30V/-3.2A, RDS(ON)=65mΩ@VGS=-4.5V
-30V/-1.2A, RDS(ON)=75mΩ@VGS=-2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS -30 V
Gate-Source Voltage
VGSS ±12 V
Continuous Drain Current (TJ=150℃)
TA=25℃
TA=70℃
ID
-4.0
A
-3.2
Pulsed Drain Current
IDM
-15 A
Continuous Source Current (Diode Conduction) IS
-1.0 A
Power Dissipation
TA=25℃
TA=70℃
PD
1.25
W
0.8
Operating Junction Temperature
TJ
150 ℃
Storage Temperature Range
TSTG -55/150 ℃
Thermal Resistance-Junction to Ambient
RθJA 120 ℃/W
VER 1.4 1
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