STP5NB100FP(2000) 查看數據表（PDF） - STMicroelectronics
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STP5NB100FP
(Rev.:2000)
(Rev.:2000)
STMicroelectronics
STP5NB100FP Datasheet PDF : 9 Pages
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STP5NB100/STP5NB100FP
THERMAL DATA
Rthj- ca se
Rt hj-a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
0.93
TO- 220F P
3.12
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Sy mbo l
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse widt h limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
5
220
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V( BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Dr a in- s ou r c e
Breakdown Voltage
ID = 250 µ A VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
1000
Typ. Max.
1
50
± 100
Un it
V
µA
µA
nA
ON (∗)
Symbol
VGS(th )
RDS(on )
ID(on)
Parameter
Test Conditions
Gate T hreshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 2.5 A
Resistance
On Stat e Drain Current VDS > ID(on ) x RDS(on )max
VGS = 10 V
Min.
3
Typ. Max.
4
5
Un it
V
2.4 2.7
Ω
5
A
DYNAMIC
Symbol
gfs (∗)
Cis s
Cos s
Crs s
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Tr ansfer
Capacitance
Test Conditions
VDS > ID(on ) x RDS(on )max ID = 2.5 A
Min.
1.5
Typ .
Max.
Un it
S
VDS = 25 V f = 1 MHz VGS = 0
1500
pF
150
pF
17
pF
2/9
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