STP5NB100FP 查看數據表（PDF） - STMicroelectronics
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STP5NB100FP Datasheet PDF : 9 Pages
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STP5NB100
STP5NB100FP
N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP
PowerMesh™ MOSFET
TYPE
VDSS
RDS(on)
ID
STP5NB100
1000 V < 2.7 Ω
5A
STP5NB100FP
1000 V < 2.7 Ω
5A
n TYPICAL RDS(on) = 2.4 Ω
n EXTREMELY HIGH dv/dt CAPABILITY
n 100% AVALANCHE TESTED
n VERY LOW INTRINSIC CAPACITANCES
n GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SWITH MODE POWER SUPPLIES (SMPS)
n DC-AC CONVERTERS FOE WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM (l)
PTOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2002
Value
Unit
STP5NB100 STP5NB100FP
1000
V
1000
V
±30
V
5
5 (*)
A
3.1
3.1 (*)
A
15.2
15.2 (*)
A
135
40
W
1.08
0.32
W/°C
4.5
4.5
V/ns
-
2500
V
–65 to 150
°C
150
°C
(*)Limited only by maximum temperature allowed
(1)ISD ≤4.7A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
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