STP3NB80FP 查看數據表（PDF） - STMicroelectronics
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STP3NB80FP Datasheet PDF : 9 Pages
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STP3NB80/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on Time
Rise Time
Test Conditions
VDD = 400 V ID = 1.3 A
RG = 4.7 Ω
VGS = 10 V
Qg
Total Gate Charge
VDD =640 V ID = 3 A VGS = 10 V
Q gs Gat e-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V ID =3 A
RG = 4.7 Ω VGS = 10 V
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 2. 6 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 2.6 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
12
10
Max.
17
14
Unit
ns
ns
17
24
nC
6.5
nC
7.5
nC
Min.
T yp.
15
17
22
Max.
21
24
31
Unit
ns
ns
ns
Min.
T yp.
Max.
2.6
10.4
Unit
A
A
1.6
V
650
ns
2.8
µC
8.5
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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