TC4627EPA 查看數據表（PDF） - Microchip Technology

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TC4627EPA

Power CMOS Drivers With Voltage Tripler

Microchip Technology 

TC4626/TC4627

TC4626/TC4627 ELECTRICAL SPECIFICATIONS (CONTINUED)

Symbol

Parameter

Min

Typ Max Units

Test Conditions

Power Supply

IDD

Power Supply Current

—

—

2.5

mA VIN = LOW or HIGH

VDD

Supply Voltage

4.0

— 6.0

V

Electrical Characteristics: Over operating temperature range, VDD = 5V, C1 = C2 = C3 10µF unless otherwise noted.

Symbol

Parameter

Min

Typ Max Units

Test Conditions

Input

VIH

VIL

IIN

Output

VOH

VOL

RO

RO

IPK

Switching Time

tR

tF

tD1

tD2

FMAX

Logic 1, High Input Voltage

Logic 0, Low Input Voltage

Input Current

2.4

—

—

—

— 0.8

-10

—

1

High Output Voltage

Low Output Voltage

Output Resistance, High

Output Resistance, Low

Peak Output Current

VDRIVE – 0.025 —

—

—

—

15

15

—

10

10

—

1.5

—

0.025

20

25

13

15

—

Rise Time

—

— 55

Fall Time

—

— 50

Delay Time

—

— 60

Delay Time

—

— 70

Maximum Switching Frequency

750

—

—

Voltage Booster

R3

R2

FOSC

VOSC

UV @VBOOST

VSTART @VBOOST

VBOOST

Power Supply

IDD

VDD

Voltage Boost Output

Source Resistance

Voltage Doubler Output

Source Resistance

Oscillator Frequency

Oscillator Amplitude

Measured at C1-

Undervoltage Threshold

Start Up Voltage

@VDD = 5V

Power Supply Current

Supply Voltage

—

400 500

—

170 300

5

— 50

4.5

— 10

7.0

7.8 8.5

10.5

11.3 12

14.6

—

—

—

—

4

4.0

— 6.0

V

V

µA 0V ≤ VIN ≤ VBOOST

V

V

Ω IOUT = 10mA, VDD = 5V

C & E Version (TA = 70°C or 85°C)

M Version (TA = 125°C)

Ω IOUT = 10mA, VDD = 5V

C & E Version (TA = 70°C or 85°C)

M Version (TA = 125°C)

A

nsec

nsec

nsec

nsec

kHz

Figure 3-1, Figure 3-2

Figure 3-1, Figure 3-2

Figure 3-1, Figure 3-2

Figure 3-1, Figure 3-2

VDD = 5V, VBOOST > 8.5V,

Figure 3-1

Ω IL = 10mA, VDD = 5V

Ω

kHz

V RLOAD = 10kΩ

V

V

V No Load

mA VIN = LOW or HIGH

V

© 2002 Microchip Technology Inc.

DS21426B-page 3

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