2SC3063 查看數據表（PDF） - New Jersey Semiconductor
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2SC3063 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
lc=10u A; IE=0
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 0.1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10u A ; l c = 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 30mA; IB=3mA
VsEion) Base-Emitter On Voltage
lc=30mA;VCE= 10V
hFE
DC Current Gain
lc= 5mA; VGE= 50V
fi
Current-Gain—Bandwidth Product
IE= -20mA; VCE= 30V
COB
Output Capacitance
IE= 0; VCB= 30V, ftest= 1MHz
2SC3063
MIN TYP. MAX UNIT
300
V
300
V
7
V
1.5
V
1.2
V
50
250
70
MHz
2.4
PF
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