PBSS5330PAS 查看數據表（PDF） - NXP Semiconductors.
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PBSS5330PAS Datasheet PDF : 18 Pages
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NXP Semiconductors
- 1.2
VBE
(V)
- 0.8
- 0.4
006aac038
(1)
(2)
(3)
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
- 1.4
VBEsat
(V)
- 1.0
- 0.6
006aac039
(1)
(2)
(3)
0
- 10- 1
-1
- 10
VCE = −2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
- 102
- 103
- 104
IC (mA)
Fig. 10. Base-emitter voltage as a function of collector
current; typical values
-1
006aac040
VCEsat
(V)
- 0.2
- 10- 1
-1
- 10
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
- 102
- 103
- 104
IC (mA)
Fig. 11. Base-emitter saturation voltage as a function of
collector current; typical values
-1
006aac041
VCEsat
(V)
- 10- 1
- 10- 2
(1)
(2)
(3)
- 10- 1
(1)
(2)
- 10- 2
(3)
- 10- 3
- 10- 1
-1
- 10
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
- 102
- 103 - 104
IC (mA)
Fig. 12. Collector-emitter saturation voltage as a
function of collector current; typical values
-
10-
3
- 10-
1
-1
- 10
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
- 102
- 103 - 104
IC (mA)
Fig. 13. Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS5330PAS
Product data sheet
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11 September 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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