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BAS321(2004) 查看數據表(PDF) - NXP Semiconductors.

零件编号
产品描述 (功能)
生产厂家
BAS321
(Rev.:2004)
NXP
NXP Semiconductors. 
BAS321 Datasheet PDF : 0 Pages
NXP Semiconductors
General purpose diode
Product data sheet
BAS321
FEATURES
Small plastic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage: max. 200 V
Repetitive peak reverse voltage: max. 250 V
Repetitive peak forward current: max. 625 mA.
APPLICATIONS
General purpose switching in e.g. surface mounted
circuits.
PINNING
PIN
1
2
handbook, halfp1age
DESCRIPTION
cathode
anode
2
MAM406
DESCRIPTION
The BAS321 is a general purpose diode fabricated in
planar technology and encapsulated in a plastic SOD323
package.
Marking code: A7
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
BAS321
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VRRM
VR
IF
IFRM
IFSM
Ptot
Tstg
Tj
PARAMETER
CONDITIONS
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
see Fig.2; note 1
repetitive peak forward current
tp < 0.5 ms; δ ≤ 0.25
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 100 µs
t = 10 ms
total power dissipation
storage temperature
Tamb = 25 °C; note 1
junction temperature
Note
1. Device mounted on an FR4 printed circuit-board.
MIN.
MAX.
250
200
250
625
UNIT
V
V
mA
mA
9
A
3
A
1.7
A
300
mW
65
+150 °C
150
°C
2004 Jan 26
2

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