MHV5IC1810NR2 查看數據表（PDF） - NXP Semiconductors.

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MHV5IC1810NR2

RF LDMOS Wideband Integrated Power Amplifier

NXP Semiconductors. 

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical CW Performances (In Freescale CW Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ1 = 120 mA, IDQ2 = 90 mA, Pout =

2.25 W Avg., 1805--1990 MHz

Power Gain

Power Added Efficiency

Gps

—

29

—

dB

PAE

—

19

—

%

Input Return Loss

IRL

—

--13

—

dB

RF Device Data

Freescale Semiconductor

MHV5IC1810NR2

3

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