BC869-25 查看數據表（PDF） - Philips Electronics
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BC869-25 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium power transistor
Product specification
BC869
FEATURES
• High current (max. 1 A)
• Low voltage (max. 20 V).
APPLICATIONS
• Low voltage, high current LF applications.
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
DESCRIPTION
PNP medium power transistor in a SOT89 plastic
package. NPN complement: BC868.
MARKING
TYPE NUMBER
BC869
BC869-16
BC869-25
MARKING CODE
CEC
CGC
CHC
handbook, halfpage
2
3
1
1
2
Bottom view
3
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−32
−20
−5
−1
−2
−200
1.35
+150
150
+150
UNIT
V
V
V
A
A
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 08
2
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