STB9NB50 查看數據表（PDF） - STMicroelectronics

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STB9NB50

N - CHANNEL ENHANCEMENT MODE Power MESH™ MOSFET

STMicroelectronics 

STB9NB50

N - CHANNEL ENHANCEMENT MODE

Power MESH™ MOSFET

TYPE

ST B9NB50

VDSS

500 V

RDS(on)

< 0.85 Ω

ID

8.6 A

s TYPICAL RDS(on) = 0.75 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s AVALANCHE RUGGED TECHNOLOGY

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s VERY LOW INTRINSIC CAPACITANCE

s GATE CHARGE MINIMIZED

s LOW LEAKAGE CURRENT

s APPLICATION ORIENTED

CHARACTERIZATION

s FOR SMD D2PAK VERSION CONTACT

SALES OFFICE

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLY (SMPS)

s DC-AC CONVERTER FOR WELDING

EQUIPMENT AND UNINTERRUPTABLE

POWER SUPPLY (UPS)

123

I2PAK

TO-262

(suffix ”-1”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

VD GR

VGS

ID

ID

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM(•)

Ptot

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg St orage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

March 1998

Value

500

500

± 30

8.6

5.4

34.4

125

1.0

4.5

-65 to 150

150

(1) ISD ≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Uni t

V

V

V

A

A

A

W

W/oC

V/ ns

oC

oC

1/8

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