2N3439(1997) 查看數據表（PDF） - STMicroelectronics
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2N3439 Datasheet PDF : 4 Pages
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2N3439 / 2N3440
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
17.5
175
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
for 2N3439 VCB = 360 V
for 2N3440 VCB = 250 V
ICEO
Collector Cut-off
Current (IB = 0)
for 2N3439 VCE = 300 V
for 2N3440 VCE = 200 V
ICEX Collector Cut-off
for 2N3439 VCE = 450 V
Current (VBE = -1.5V) for 2N3440 VCE = 300 V
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
VEB = 6 V
IC = 50 mA
for 2N3439
for 2N3440
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 50 mA IB = 4 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 50 mA IB = 4 mA
hFE∗ DC Current Gain
IC = 20 mA VCE = 10 V
IC = 2 mA VCE = 10 V for 2N3439
hFE Small Signal Current IC = 5 mA VCE = 10 V f = 1KHz
Gain
fT
Transition frequency IC = 5 mA VCE = 10 V f = 5MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min.
350
250
40
30
25
15
Typ.
Max.
20
20
20
50
500
500
20
0.5
1.3
160
Unit
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
MHz
2/4
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