2N3700(1989) 查看數據表（PDF） - STMicroelectronics
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2N3700 Datasheet PDF : 4 Pages
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2N3700
THERMAL DATA
Rth j-cas e Thermal Resistance Junction-case
R th j-amb Thermal Resistance Junction-ambient
Max
97
°C/W
Max
350
°C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol
ICBO
Parameter
Collector Cutoff Current (IE = 0)
IEBO
V(B R)CBO
V(BR)CE O *
V(B R)E BO
VCE( sat )*
VBE( sat )*
hFE*
Emitter Cutoff Current (IC = 0)
Collector-base Breakdown
Voltage (IE = 0)
Collector-emitter Breakdown
Voltage (IB = 0)
Emitter-base Breakdown Voltage
(IC = 0)
Collector-emitter Saturation
Voltage
Base-emitter Saturation Voltage
DC Current Gain
hfe
Small Signal Current Gain
Test Conditions
VCB = 90 V
VCB = 90 V
T amb = 150 °C
VEB = 5 V
IC = 100 µA
IC = 30 mA
IE = 100 µA
IC = 150 mA
IC = 500 mA
IC = 150 mA
IB = 15 mA
IB = 50 mA
IB = 15 mA
IC = 0.1 mA
IC = 10 mA
IC = 150 mA
IC = 500 mA
IC = 1 A
IC = 150 mA
T amb = – 55 °C
I C = 1 mA
f = 1 kHz
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 5 V
Min.
140
80
7
50
90
100
50
15
40
80
fT
CEBO
Transition Frequency
Emitter-base Capacitance
I C = 50 mA
f = 20 MHz
IC = 0
f = 1 MHz
VCE = 10 V
VE B = 0.5 V
C CBO Collector-base Capacitance
IE = 0
f = 1 MHz
VCB = 10 V
r b b ’C b ’c Feedback Time Constant
IC = 10 mA
f = 4 MHz
VCB = 10 V
25
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Typ.
100
60
12
Max.
10
10
10
0.2
0.5
1.1
300
400
400
Unit
nA
µA
nA
V
V
V
V
V
V
MHz
pF
pF
ps
2/4
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