150N3LLH5(2008_04) 查看數據表（PDF） - STMicroelectronics
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150N3LLH5
(Rev.:2008_04)
(Rev.:2008_04)
STMicroelectronics
150N3LLH5 Datasheet PDF : 12 Pages
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STL150N3LLH5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID(1)
ID (1)
ID(2)
ID (3)
IDM(3)
PTOT (1)
PTOT (3)
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Total dissipation at TC = 25 °C
Derating factor
TJ
Operating junction temperature
Tstg
Storage temperature
1. The value is rated according Rthj-c
2. The value is rated according Rthj-pcb
3. Pulse width limited by safe operating area
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case (drain) (steady state)
Rthj-pcb (1) Thermal resistance junction-ambient
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Table 4. Avalanche data
Symbol
Parameter
Not-repetitive avalanche current,
IAV
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting TJ = 25 °C, ID = IAV , VDD = 24 V)
Value
30
± 20
150
94
35
21.8
140
80
4
0.03
-55 to 150
Value
1.56
31.3
Value
17
300
Unit
V
V
A
A
A
A
A
W
W
W/°C
°C
Unit
°C/W
°C/W
Unit
A
mJ
3/12
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