STY16NA90 查看數據表（PDF） - STMicroelectronics
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产品描述 (功能)
生产厂家
STY16NA90
STMicroelectronics
STY16NA90 Datasheet PDF : 5 Pages
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STY16NA90
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
Qg
Qgs
Qgd
P a ra m et er
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 450 V
RG = 4.7 Ω
VDD = 720 V
ID = 8 A
VGS = 10 V
ID = 16 A VGS = 10 V
Min.
Typ .
30
30
245
25
110
Max.
320
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 720 V
RG = 4.7 Ω
ID = 16 A
VGS = 10 V
Min.
Typ .
80
25
115
Max.
105
35
150
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 16 A
VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
ISD = 16 A
VDD = 100 V
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ .
1100
25.3
46
Max.
16
64
2
Unit
A
A
V
ns
µC
A
3/5
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