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M74HCT563TTR 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
M74HCT563TTR
ST-Microelectronics
STMicroelectronics 
M74HCT563TTR Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
M74HCT573
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
VCC
(V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN
COUT
CPD
Input Capacitance
Output
Capacitance
Power Dissipation
Capacitance (note
1)
5 10
10
10 pF
10
pF
51
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/8 (per Latch)
TEST CIRCUIT
TEST
tPLH, tPHL
tPZL, tPLZ
tPZH, tPHZ
CL = 50pF/150pF or equivalent (includes jig and probe capacitance)
R1 = 1Kor equivalent
RT = ZOUT of pulse generator (typically 50)
SWITCH
Open
VCC
GND
5/11

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