P22NF03L(2007) 查看數據表（PDF） - STMicroelectronics

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P22NF03L
(Rev.:2007)

N-channel 30V - 0.0038Ω - 22A - TO-220 STripFET™ II Power MOSFET

STMicroelectronics 

STP22NF03L

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 22A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 22A,

di/dt = 100A/µs,

VDD = 15V, Tj = 150°C

(see Figure 15)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

22

A

88

A

1.5 V

30

ns

18

nC

1.2

A

5/12

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