M54HC193D1 查看數據表（PDF） - STMicroelectronics
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M54HC193D1 Datasheet PDF : 13 Pages
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M54HC193
Test Condition
Symbol
Parameter
VCC
(V)
tW(L) Minimum Pulse
2.0
Width (LOAD)
4.5
6.0
tW(H) Minimum Pulse
2.0
Width (CLEAR)
4.5
6.0
ts Minimum Set-up
2.0
Time
4.5
(DATA -LOAD)
6.0
th Minimum Hold
2.0
Time
4.5
6.0
tREM Minimum Removal 2.0
Time (LOAD)
4.5
6.0
tREM Minimum Removal 2.0
Time (CLEAR)
4.5
6.0
Value
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
34 75
95
110
9 15
19
22 ns
7 13
16
19
40 100
125
150
12 20
25
30 ns
10 17
21
26
30 75
95
110
9 15
19
22 ns
7 13
16
19
0
0
0
0
0
0 ns
0
0
0
6 50
65
75
2 10
13
15 ns
2
9
11
13
14 50
65
75
4 10
13
15 ns
3
9
11
13
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
VCC
(V)
CIN Input Capacitance 5.0
CPD Power Dissipation
Capacitance (note 5.0
1)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
5 10
10
10 pF
67
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
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