VND5E025AK-E 查看數據表（PDF） - STMicroelectronics

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VND5E025AK-E

DBL CH hi side drive

STMicroelectronics 

Electrical specifications

Table 3. Absolute maximum ratings (continued)

Symbol

Parameter

EMAX

VESD

VESD

Tj

Tstg

Maximum switching energy (single pulse)

(L = 0.8 mH; RL = 0 Ω; Vbat = 13.5 V; Tjstart = 150 °C;

IOUT = IlimL(Typ.))

Electrostatic discharge

(Human Body Model: R = 1.5 kΩ; C = 100 pF)

– Input

– Current sense

– CS_DIS

– Output

– VCC

Charge device model (CDM-AEC-Q100-011)

Junction operating temperature

Storage temperature

VND5E025AK-E

Value

Unit

140

mJ

4000

V

2000

V

4000

V

5000

V

5000

V

750

V

- 40 to 150

°C

- 55 to 150

2.2

Thermal data

Table 4.

Symbol

Thermal data

Parameter

Rthj-case Thermal resistance junction-case (with one channel ON)

Rthj-amb Thermal resistance junction-ambient

Max value

1.35

See Figure 36

Unit

°C/W

2.3

Electrical characteristics

Values specified in this section are for 8 V<VCC<28 V; -40 °C<Tj<150 °C, unless otherwise

stated.

Table 5. Power section

Symbol

Parameter

Test conditions

VCC

Operating supply

voltage

VUSD Undervoltage shutdown

VUSDhyst

Undervoltage shutdown

hysteresis

RON On-state resistance (1)

Vclamp Clamp voltage

IOUT = 3 A; Tj = 25 °C

IOUT = 3 A; Tj = 150 °C

IOUT = 3 A; VCC = 5 V; Tj = 25 °C

IS = 20 mA

Min. Typ. Max. Unit

4.5 13 28

3.5 4.5 V

0.5

25

50 mΩ

35

41 46 52 V

8/38

Doc ID 14618 Rev 5

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