DA28F320S5-110 View Datasheet(PDF) - Intel

Part Name

Description

Manufacturer

DA28F320S5-110

WORD-WIDE FlashFile™ MEMORY FAMILY

Intel 

28F160S5, 28F320S5

E

Sym

Table 19. DC Characteristics (Continued)

Parameter

Notes Min

Max

Unit

Conditions

VIL

Input Low Voltage

7

–0.5

0.8

V

VIH Input High Voltage

7

2.0

VCC + 0.5 V

VOL Output Low Voltage

3,7

0.45

V VCC = VCC Min

IOL = 5.8 mA

VOH1 Output High Voltage (TTL)

3,7

2.4

V VCC = VCC Min

IOH = –2.5 mA

VOH2 Output High Voltage (CMOS)

3,7 0.85 ×

VCC

V VCC = VCC Min

IOH = –2.5 mA

VCC – 0.4

V VCC = VCC Min

IOH = –100 µA

VPPLK VPP Lockout Voltage

4,7

1.5

V

VPPH VPP Voltage

4

4.5

5.5

V

VLKO VCC Lockout Voltage

8

2.0

V

NOTES:

1. All currents are in RMS unless otherwise noted. Typical values at nominal VCC voltage and TA = +25°C. These currents are

valid for all product versions (packages and speeds).

2. ICCWS and ICCES are specified with the device de-selected. If read or programmed while in erase suspend mode, the

device’s current is the sum of ICCWS or ICCES and ICCR or ICCW.

3. Includes STS in level RY/BY# mode.

4. Block erase, program, and lock-bit configurations are inhibited when VPP ≤ VPPLK, and not guaranteed in the range between

VPPLK (max) and VPPH (min), and above VPPH (max).

5. Automatic Power Savings (APS) reduces typical ICCR to 1 mA at 5V VCC static operation.

6. CMOS inputs are either VCC ± 0.2V or GND ± 0.2V. TTL inputs are either VIL or VIH.

7. Sampled, not 100% tested.

8. With VCC ≤ VLKO flash memory writes are inhibited.

42

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