STPS10L60CG View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS10L60CG Datasheet PDF : 8 Pages
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STPS10L60C
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
Average forward current versus
ambient temperature (δ = 0.5)
(per diode)
PF(AV)(W)
3.5
3.0
δ = 0.05
δ = 0.1 δ = 0.2
δ = 0.5
IF(AV)(A)
6
5
Rth(j-a)=Rth(j-c)
2.5
δ=1
4
2.0
Rth(j-a)=15°C/W
3
1.5
2
1.0
T
T
0.5
1
IF(AV)(A)
δ=tp/T
tp
δ=tp/T
tp
Tamb(°C)
0.0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
0
25
50
75
100
125
150
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
PARM(tp)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.001
0.01
0.1
0.4
tp(µs)
0.2
Tj(°C)
0
1
10
100
1000
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220FPAB)
Figure 6.
Relative variation of thermal
transient impedance junction to
case versus pulse duration
(TO-220FPAB)
IM(A)
90
80
70
60
50
40
30
20
IM
10
0
1E-3
t
δ=0.5
1E-2
t(s)
1E-1
Zth(j-c)/Rth(j-c)
1.0
0.8
TC=25°C
TC=75°C
TC=125°C
0.6
δ = 0.5
0.4
δ = 0.2
0.2
δ = 0.1
1E+0
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
3/8
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