STPS10L60CG View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS10L60CG Datasheet PDF : 8 Pages
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Characteristics
STPS10L60C
Figure 7.
Relative variation of thermal
transient impedance junction to
case versus pulse duration
(D2PAK)
Figure 8.
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
IR(mA)
3E+2
1E+2
1E+1
Tj=150°C
Tj=125°C
Tj=100°C
1E+0
1E-1
1E-2
1.E+00
1E-3
0
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
5 10 15 20 25 30 35 40 45 50 55 60
Figure 9.
C(pF)
1000
500
Junction capacitance versus
reverse voltage applied (typical
values, per diode)
F=1MHz
VOSC=30mVRMS
Tj=25°C
Figure 10. Forward voltage drop versus
forward current (maximum values,
per diode)
IFM(A)
100.0
Tj=150°C
(typical values)
10.0
Tj=125°C
Tj=25°C
200
1.0
100
1
VR(V)
10
VFM(V)
0.1
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Figure 11.
Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, copper thickness:
35 µm) ( D2PAK)
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
S(Cu)(cm²)
0
0
5
10
15
20
25
30
35
40
4/8
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