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STTH112RL View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STTH112RL
ST-Microelectronics
STMicroelectronics 
STTH112RL Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Electrical characteristics
1
Electrical characteristics
STTH112
Absolute ratings (limiting values)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
V(RMS) Voltage rms
IF(AV) Average forward current
IFSM Forward surge current t = 8.3 ms
Tstg Storage temperature range
Tj Maximum operating junction temperature
Tl = 85°C δ =0.5 DO-41
Tl = 115°C δ =0.5 SMA
Tl = 125°C δ =0.5 SMB
DO-41
SMA
SMB
Value
1200
850
1
20
18
- 50 + 175
+ 175
Table 2.
Symbol
Thermal parameters
Parameter
Rth (j-l) Junction to lead
Rth (j-a) Junction to ambient
L = 10 mm
L = 10 mm
DO-41
SMA
SMB
DO-41
Value
45
30
25
110
Table 3. Static electrical characteristics
Symbol
Parameter
Tests conditions
IR Reverse leakage current
VF Forward voltage drop
VR = 1200 V Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
IF = 1 A
Tj = 125 °C
Tj = 150 °C
Min.
Typ.
1.17
1.10
Max.
5
50
1.9
1.65
1.55
Table 4. Dynamic electrical characteristics
Symbol
Parameter
Tests conditions
trr Reverse recovery time
IF = 0.5 A
Irr = 0.25 A IR = 1A
Tj = 25 °C
tfr Forward recovery time
IF = 1 A
dIF/dt = 50 A/µs
VFP Forward recovery voltage VFR = 1.1 x VFmax
Tj = 25 °C
Min.
Typ.
Max.
75
500
30
Unit
V
V
A
A
°C
°C
Unit
°C/W
Unit
µA
V
Unit
ns
ns
V
2/8
Doc ID 9343 Rev 5

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