STPS40H100CW View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS40H100CW Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS40H100CW
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
VRRM
IF(RMS)
IF(AV)
IFSM
IRRM
IRSM
EAS
PARM
Tstg
Tj
dV/dt
Repetitive peak reverse voltage
100
Forward rms current
30
Average forward current
Tc = 160 °C Per diode
20
= 0.5
Per device
40
Surge non repetitive forward current tp = 10 ms sinusoidal
300
Repetitive peak reverse current
tp = 2 µs F= 1 kHz square
1
Non repetitive peak reverse current tp = 100 µs square
4
Non repetitive avalanche energy
Tj = 25 °C, L = 60 mH
Ias = 3 A
36
Repetitive peak avalanche power tp = 1 µs, Tj = 25 °C
26400
Storage temperature range
-65 to + 175
Maximum operating junction temperature
175
Critical rate of rise of reverse voltage
10000
Unit
V
A
A
A
A
A
mJ
W
°C
°C
V/µs
Table 3. Thermal resistance
Symbol
Parameter
Rth(j-c) Junction to case
Per diode
Total
Rth(c)
Coupling
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
0.9
0.55
0.1
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
IR(1) Reverse leakage current
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
IF = 20 A
VF(2) Forward voltage drop
Tj = 125 °C
Tj = 25 °C
IF = 20 A
IF = 40 A
Tj = 125 °C
IF = 40 A
1. Pulse test: tp = 5 ms, < 2%
2. Pulse test: tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation:
P = 0.5 x IF(AV) + 0.0055 IF2(RMS)
Min. Typ. Max. Unit
10 µA
5
15 mA
0.73
0.58 0.61
V
0.85
0.67 0.72
2/7
Doc ID 6348 Rev 5
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