STPS40H100CW View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS40H100CW Datasheet PDF : 7 Pages
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STPS40H100CW
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current (per
diode)
Average forward current versus
ambient temperature ( = 0.5, per
diode)
PF(av)(W)
16
δ = 0.5
14
δ = 0.2
12
δ = 0.1
10
δ = 0.05
δ=1
8
6
T
4
2
IF(av) (A)
δ=tp/T
tp
0
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
IF(av)(A)
22
Rth(j-a)=Rth(j-c)
20
18
16
14
Rth(j-a)=15°C/W
12
10
8
6
T
4
2
δ=tp/T
tp
Tamb(°C)
0
0
25 50 75 100 125 150 175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1 µs)
1
PARM(Tj)
PARM(25 °C)
1.2
1
0.1
0.8
0.6
0.01
0.001
0.01
0.1
0.4
tp(µs)
0.2
Tj(°C)
0
25
50
75
100
125
150
1
10
100
1000
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values, per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration
IM(A)
400
350
300
250
200
150
100
IM
50
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=50°C
Tc=100°C
Tc=150°C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
T
1E-2
tp(s)
1E-1
δ=tp/T
tp
1E+0
Doc ID 6348 Rev 5
3/7
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