STPS1L60RL View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS1L60RL Datasheet PDF : 10 Pages
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Characteristics
1
Characteristics
STPS1L60
Table 2.
Symbol
Absolute ratings (limiting values)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
60
IF(RMS) Forward rms current
STmite flat
2
SMA, DO-41
10
SMA
TL = 130 °C δ = 0.5
IF(AV) Average forward current DO-41
TL = 120 °C δ = 0.5
1
STmite flat TC = 135 °C δ = 0.5
IFSM Surge non repetitive forward current
tp =10 ms sinusoidal
40
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
1200
Tstg Storage temperature range
Tj Maximum operating junction temperature (1)
- 65 to + 150
150
dV/dt Critical rate of rise of reverse voltage
10000
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Value
V
A
A
A
A
W
°C
°C
V/µs
Unit
Rth(j-a) Junction to ambient
Rth(j-l) Junction to lead
Rth(j-c) Junction to case
SMA
Lead length = 10 mm DO-41
SMA
Lead length = 10 mm DO-41
STmite flat
120
°C/W
100
30
°C/W
45
20
°C/W
Table 4.
Symbol
Static electrical characteristics
Parameter
Tests conditions
Min. Typ. Max. Unit
IR(1)
Tj = 25 °C
Reverse leakage current
VR = VRRM
Tj = 100 °C
Tj = 25 °C
Tj = 100 °C IF = 1 A
VF(1) Forward voltage drop
Tj = 125 °C
Tj = 25 °C
Tj = 100 °C IF = 2 A
Tj = 125 °C
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.44 x IF(AV) + 0.12 IF2(RMS)
50
µA
1.5
5
mA
0.57
0.56
0.5
0.54
V
0.75
0.68
0.6
0.66
2/10
Doc ID 7504 Rev 8
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