STPS10H100CFP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS10H100CFP Datasheet PDF : 7 Pages
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STPS10H100CT/CG/CR/CFP
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-c) Junction to case
D2PAK / I2PAK
TO-220AB
Per diode
Total
Rth (c)
Coupling
Rth (j-c) Junction to case
TO-220FPAB
Per diode
Total
Rth (c)
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
2.2
1.3
0.3
4.5
3.5
2.5
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
Min.
IR *
VF **
Reverse leakage current
Forward voltage drop
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VR = VRRM
IF = 5 A
Tj = 25°C
Tj = 125°C
IF = 10 A
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.51 x IF(AV) + 0.02 x IF2(RMS)
Typ.
1.3
0.57
0.66
Max.
3.5
4.5
0.73
0.61
0.85
0.71
Unit
µA
mA
V
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
4.0
3.5
δ = 0.1
δ = 0.05
δ = 0.2 δ = 0.5
3.0
δ=1
2.5
2.0
1.5
1.0
T
0.5
IF(av) (A)
δ=tp/T
tp
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
IF(av)(A)
6
5
4
D²PAK/I²PAK/TO-220AB
TO-220FPAB
Rth(j-a)=Rth(j-c)
3
Rth(j-a)=15°C/W
2
1
Tamb(°C)
0
0
25 50 75 100 125 150 175
2/7
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