STPS10H100CFP View Datasheet(PDF) - STMicroelectronics
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Description
Manufacturer
STPS10H100CFP Datasheet PDF : 7 Pages
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STPS10H100CT/CG/CR/CFP
Fig. 3: Normalized avalanche power derating ver-
sus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
IM(A)
120
100
80
60
40
IM
20
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=50°C
Tc=75°C
Tc=125°C
1E+0
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode)(TO-220FPAB)
IM(A)
80
70
60
50
40
30
20
IM
10
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=50°C
Tc=75°C
Tc=125°C
1E+0
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4 δ = 0.2
0.2
δ = 0.1
Single pulse
0.0
1E-3
1E-2
T
tp(s)
δ=tp/T
1E-1
tp
1E+0
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration (per
diode).(TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
0.2 δ = 0.2
δ = 0.1
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
3/7
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