STPS16H100CFP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS16H100CFP

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STMicroelectronics 

STPS16H100C

1.1

Characteristics (curves)

Figure 1: Conduction losses versus average

current (per diode)

PF(AV)(W)

7

6

δ = 0.1 δ = 0.2

δ = 0.05

δ = 0.5

5

δ= 1

4

3

2

T

1

IF(AV)(A)

0

δ=tp/T

tp

0

1

2

3

4

5

67

8

9

10

Characteristics

Figure 2: Average forward current versus ambient

temperature (δ= 0.5 per diode)

IF(AV)(A)

9

8

Rth(j-a)=Rth(j-c)

7

6

5

4

Rth(j-a)=50°C/W

3

2

T

1

0 δ=tp/T

tp

0

25

50

Tamb(°C)

75

100

125

150

175

Figure 3: Normalized avalanche power derating

versus pulse duration (Tj= 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration

Zth(j-c) / Rth(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4 δ = 0.2

0.3 δ = 0.1

0.2

Single pulse

0.1

0.0

1.E-03

1.E-02

t P(s)

T

1.E-01

δ=tp/T

tp

1.E+00

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values per diode)

IR(mA)

1.E+01

Tj=150°C

1.E+00

Tj=125°C

1.E-01

1.E-02

1.E-03

1.E-04

0

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

VR(V)

10 20 30 40 50 60 70 80 90 100

Figure 6: Junction capacitances versus reverse

voltage applied (typical values per diode)

C(nF)

1.00

F=1MHz

Vosc=30mV

Tj=25°C

0.10

0.01

1

VR(V)

10

100

DocID8734 Rev 3

3/10

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