STPS20150CR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS20150CR Datasheet PDF : 15 Pages
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Characteristics
STPS20150C
1
Characteristics
Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
150
V
IF(RMS) Forward rms current
30
A
Average forward
TO-220AB,
D2PAK, I2PAK
TC = 155 °C
Per diode
10
IF(AV)
current δ = 0.5,
square wave
TO-220FPAB TC = 135 °C
A
All types
Per device
20
IFSM
Surge non repetitive
forward current
tp = 10 ms sinusoidal
180
A
PARM
Repetitive peak
avalanche power
tp = 10 µs, Tj = 125 °C
480
W
Tstg Storage temperature range
Tj
Maximum operating junction temperature (1)
-65 to + 175 °C
+ 175
°C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Rth(j-c)
Junction to case
Rth(c)
Coupling
Table 3: Thermal parameter
Parameter
TO-220AB, D2PAK, I2PAK
TO-220FPAB
TO-220AB, D2PAK, I2PAK
TO-220FPAB
TO-220AB, D2PAK, I2PAK
TO-220FPAB
Per diode
Total
-
Value
2.2
4.5
1.3
3.5
0.3
2.5
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
2/15
DocID7756 Rev 11
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