STPS30L60CR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS30L60CR Datasheet PDF : 13 Pages
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STPS30L60C
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current
VF (1) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 15 A
IF = 15 A
IF = 30 A
IF = 30 A
480
µA
77
130
mA
0.6
0.5
0.56
V
0.75
0.65
0.7
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.42 x IF(AV) + 0.009x IF2(RMS)
Figure 2.
Average forward power dissipation
versus average forward current
(per diode)
PF(av)(W)
12
δ = 0.1 δ = 0.2
δ = 0.5
δ=1
10
δ = 0.05
8
Figure 3. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
18 IF(av)(A)
16
Rth(j-a)=Rth(j-c)
TO-220AB, TO-220AB narrow leads, I2PAK, D2PAK, TO-247
14
12
TO-220FPAB
10
6
8
Rth(j-a)=15 °C/W
6
4
T
T
4
2
2
δ=tp/T
tp
Tamb(°C)
IF(av) (A)
δ=tp/T
tp
0
0
0
25
50
75
100
125
150
0 2 4 6 8 10 12 14 16 18 20
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1 µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(Tj)
PARM(25 °C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Doc ID 6479 Rev 10
3/13
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