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ST72E311J4D0S View Datasheet(PDF) - STMicroelectronics

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ST72E311J4D0S Datasheet PDF : 101 Pages
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ST72E311 ST72T311
8 GENERAL INFORMATION
8.1 EPROM ERASURE
EPROM version devices are erased by exposure
to high intensity UV light admitted through the
transparent window. This exposure discharges the
floating gate to its initial state through induced
photo current.
It is recommended that the EPROM devices be
kept out of direct sunlight, since the UV content of
sunlight can be sufficient to cause functional fail-
ure. Extended exposure to room level fluorescent
lighting may also cause erasure.
An opaque coating (paint, tape, label, etc...)
should be placed over the package window if the
product is to be operated under these lighting con-
ditions. Covering the window also reduces IDD in
power-saving modes due to photo-diode leakage
currents.
An Ultraviolet source of wave length 2537 Å yield-
ing a total integrated dosage of 15 Watt-sec/cm2 is
required to erase the device. It will be erased in 15
to 20 minutes if such a UV lamp with a 12mW/cm2
power rating is placed 1 inch from the device win-
dow without any interposed filters.
96/101

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