28F016SA
E
5.8 AC Characteristics for WE#–Controlled Command Write Operations:
COMMERCIAL AND EXTENDED TEMPERATURE(1)
VCC = 3.3V ± 10%, TA = 0°C to +70°C, –40°C to +85°C
Temp
Commercial
Comm/Extended
Sym
Parameter
Notes Min Typ Max Min Typ Max Units
tAVAV Write Cycle Time
120
150
ns
tVPWH VPP Setup to WE# Going High
3
100
100
ns
tPHEL RP# Setup to CE# Going Low
480
480
ns
tELWL CE# Setup to WE# Going Low
10
10
ns
tAVWH Address Setup to WE# Going
2,6
75
75
ns
High
tDVWH Data Setup to WE# Going
2,6
75
75
ns
High
tWLWH WE# Pulse Width
75
75
ns
tWHDX Data Hold from WE# High
2
10
10
ns
tWHAX Address Hold from WE# High
2
10
10
ns
tWHEH CE# Hold from WE# High
10
10
ns
tWHWL WE# Pulse Width High
45
75
ns
tGHWL Read Recovery before Write
0
0
ns
tWHRL
WE# High to RY/BY# Going
Low
100
100 ns
tRHPL
RP# Hold from Valid Status
Register (CSR, GSR, BSR)
Data and RY/BY# High
3
0
0
ns
tPHWL RP# High Recovery to WE#
1
Going Low
1
µs
tWHGL Write Recovery before Read
95
120
ns
tQVVL VPP Hold from Valid Status
0
Register (CSR, GSR, BSR)
Data and RY/BY# High
0
µs
tWHQV1 Duration of Word/Byte
Program Operation
4,5
5
9 Note 5
9 Note µs
7
7
tWHQV2 Duration of Block Erase
Operation
4
0.3
10 0.3
10 sec
38