VNH3ASP30TR-E(2004) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
VNH3ASP30TR-E Datasheet PDF : 18 Pages
| |||
VNH3ASP30-E
ELECTRICAL CHARACTERISTICS (continued)
Table 13. Current Sense (9V<VCC<16V)
Symbol
Parameter
K1
IOUT/ISENSE
K2
IOUT/ISENSE
dK1 / K1 (*) Analog sense current drift
dK2 / K2 (*)
ISENSEO
Analog sense current drift
Analog Sense Leakage
Current
Test Conditions
IOUT=30A; RSENSE=700Ω
Tj= - 40 to 150°C
IOUT=8A; RSENSE=700Ω
Tj= - 40 to 150°C
IOUT=30A; RSENSE=700Ω
Tj= - 40 to 150°C
IOUT >8A; RSENSE=700Ω
Tj= - 40 to 150°C
IOUT=0A; VSENSE=0V;
Tj= - 40 to 150°C
Min Typ Max Unit
4000 4700 5400
3750 4700 5650
-8
+8
%
-10
+10
%
0
70
µA
Note:(*) Analog sense current drift is deviation of factor K for a given device over (-40°C to 150°C and 9V<VCC<16V) with respect to it’s
value measured at Tj=25°C, VCC=13V.
WAVEFORMS AND TRUTH TABLE
Table 14. Truth Table In Normal Operating Conditions
In normal operating conditions the DIAGX/ENX pin is
considered as an input pin by the device. This pin must be
externally pulled high.
PWM pin usage:
In all cases, a “0” on the PWM pin will turn-off both LSA
and LSB switches. When PWM rises back to “1”, LSA or
LSB turn on again depending on the input pin state.
INA
INB
DIAGA/ENA DIAGB/ENB OUTA
OUTB
CS
Operating mode
1
1
1
1
0
1
0
1
1
1
H
H
High Imp. Brake to VCC
1
H
L
ISENSE=IOUT/K Clockwise (CW)
1
L
H
ISENSE=IOUT/K
Counterclockwise
(CCW)
0
0
1
1
L
L
High Imp. Brake to GND
7/18
Share Link: 