STP13NM60N(2020) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP13NM60N
(Rev.:2020)
(Rev.:2020)
STMicroelectronics
STP13NM60N Datasheet PDF : 20 Pages
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STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V, TC = 125 °C (1)
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance VGS = 10 V, ID = 5.5 A
1. Defined by design, not subject to production test.
Min. Typ. Max. Unit
600
V
1
µA
100
±100 nA
2
3
4
V
280 360 mΩ
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Input capacitance
-
790
-
pF
Coss
Output capacitance
VDS = 50 V, f = 1 MHz, VGS = 0 V
-
60
-
pF
Crss
Reverse transfer capacitance
-
3.6
-
pF
Coss eq.(1) Equivalent output capacitance
VDS = 0 to 480 V, VGS = 0 V
-
135
-
pF
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDD = 480 V, ID = 11 A, VGS = 0 to 10 V
(see Figure 17. Test circuit for gate
charge behavior)
-
27
-
nC
-
4
-
nC
-
14
-
nC
Rg
Gate input resistance
f = 1 MHz, open drain
-
4.7
-
Ω
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
VDD = 300 V, ID = 5.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16. Test circuit for resistive
load switching times and
Figure 21. Switching time waveform)
Min. Typ. Max. Unit
-
3
-
ns
-
8
-
ns
-
30
-
ns
-
10
-
ns
DS6112 - Rev 6
page 3/20
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