STP13NM60N(2020) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP13NM60N
(Rev.:2020)

N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages

STMicroelectronics 

STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N

Electrical characteristics

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

VGS = 0 V, ISD = 11 A

ISD = 11 A, di/dt = 100 A/µs,

VDD = 100 V

(see Figure 18. Test circuit for inductive

load switching and diode recovery times)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 11 A, di/dt = 100 A/µs,

VDD = 100 V, TJ = 150 °C

(see Figure 18. Test circuit for inductive

load switching and diode recovery times)

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Min. Typ. Max. Unit

-

11

A

-

44

A

-

1.5

V

-

230

ns

-

2

µC

-

18

A

-

290

ns

-

2.5

µC

-

17

A

DS6112 - Rev 6

page 4/20

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