STA333ML View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STA333ML Datasheet PDF : 23 Pages
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Electrical specifications
STA333ML
3.4
Electrical specifications - digital section
Table 6. Electrical specifications for digital section
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
Iil
Input current without bias Vi = 0 V
Iih
device
Vi = VDD = 3.6 V
Vil
Low-level input voltage
-
Vih High-level input voltage -
Vol Low-level output voltage Iol = 2 mA
Voh High-level output voltage Ioh = 2 mA
Ipu Pull-up/down current
-
Rpu
Equivalent pull-up/down
resistance
-
-10
-
10
µA
-10
-
10
µA
-
-
0.2 *
VDD
V
0.8 *
VDD
-
-
V
-
-
0.4 *
VDD
V
0.8 *
VDD
-
-
V
-25
66
125
µA
-
50
-
k
3.5
Electrical specifications - power section
The specifications given here are with the operating conditions: VCC = 18 V, VDD = 3.3 V,
fsw = 384 kHz, Tamb = 25 °C, RL = 8 unless otherwise specified
Symbol
Table 7. Electrical specifications for power section
Parameter
Conditions
Min. Typ. Max. Unit
Po Output power BTL
THD = 1%
THD = 10%
-
16
-
W
-
20
-
RdsON
On resistance of power
P-channel/N-channel ld = 1 A
MOSFET (total bridge)
-
180
250
m
Power
ldss P-channel/N-channel -
leakage current
-
-
10
A
gP
Power P-channel
RdsON matching
ld = 1 A
95
-
-
%
gN
Power N-channel
RdsON matching
ld = 1 A
95
-
-
%
ILDT
Low current dead time
(static)
Resistive load Figure 4
-
5
10
ns
IHDT
High current dead time
(dynamic)
Load = 1.5 A (Figure 5)
-
10
20
ns
tr
Rise time
Resistive load Figure 4
-
8
10
ns
8/23
DocID13177 Rev 8
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