DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM8S105C2P6TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM8S105C2P6TR Datasheet PDF : 56 Pages
First Prev 31 32 33 34 35 36 37 38 39 40 Next Last
Electrical characteristics
STM8S103xx, STM8S105xx
7.3
Operating conditions
Table 13. General operating conditions(1)
Symbol
Parameter
Conditions
Min Max Unit
fCPU Internal CPU clock frequency
0
VDD/VDD_IO Standard operating voltage
3.0
LQFP48
Power dissipation at
PD
TA= 85° C for suffix 6
or TA= 125° C for suffix 3
LQFP44
LQFP32
VFQFN32
TSSOP20
Ambient temperature for 6
Maximum power dissipation -40
suffix version
Low power dissipation(2)
-40
TA
Ambient temperature for 3
Maximum power dissipation -40
suffix version
Low power dissipation (2)
-40
6 suffix version
-40
TJ
Junction temperature range
3 suffix version
-40
16
5.5
TBD
TBD
TBD
TBD
TBD
85
105
125
TBD
105
TBD
MHz
V
mW
°C
°C
°C
°C
°C
°C
1. TBD = to be determined.
2. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax
Figure 12. fCPUmax versus VDD
fCPU [MHz]
FUNCTIONALITY
NOT GUARANTEED 16
IN THIS AREA
12
8
4
0
FUNCTIONALITY
GUARANTEED
@ TA -40 to 125 °C
3.0
4.0
5.0 5.5
SUPPLY VOLTAGE [V]
38/56

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]