STM32F407ZEH7TR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STM32F407ZEH7TR Datasheet PDF : 185 Pages
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STM32F405xx, STM32F407xx
Electrical characteristics
Table 27. Peripheral current consumption (continued)
Peripheral(1)
168 MHz
144 MHz
APB2
SDIO
TIM1
TIM8
TIM9
TIM10
TIM11
ADC1(5)
ADC2(5)
ADC3(5)
SPI1
USART1
USART6
0.64
0.54
1.47
1.14
1.58
1.22
0.68
0.54
0.45
0.36
0.47
0.38
2.20
2.10
2.04
1.93
2.10
2.00
0.14
0.12
0.34
0.27
0.34
0.28
1. HSE oscillator with 4 MHz crystal and PLL are ON.
2. I2SMOD bit set in SPI_I2SCFGR register, and then the I2SE bit set to enable I2S peripheral.
3. EN1 bit is set in DAC_CR register.
4. EN2 bit is set in DAC_CR register.
5. ADON bit set in ADC_CR2 register.
Unit
mA
5.3.7
Wakeup time from low-power mode
The wakeup times given in Table 28 is measured on a wakeup phase with a 16 MHz HSI
RC oscillator. The clock source used to wake up the device depends from the current
operating mode:
• Stop or Standby mode: the clock source is the RC oscillator
• Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 14.
Table 28. Low-power mode wakeup timings
Symbol
Parameter
Min(1) Typ(1) Max(1) Unit
tWUSLEEP(2)
Wakeup from Sleep mode
Wakeup from Stop mode (regulator in Run mode)
-
1
-
µs
-
13
-
tWUSTOP(2)
Wakeup from Stop mode (regulator in low power mode)
-
17
40
µs
Wakeup from Stop mode (regulator in low power mode
and Flash memory in Deep power down mode)
-
110
-
tWUSTDBY(2)(3) Wakeup from Standby mode
260
375 480 µs
1. Based on characterization, not tested in production.
2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction.
3. tWUSTDBY minimum and maximum values are given at 105 °C and –45 °C, respectively.
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