32.12 Flash and EEPROM Memory Characteristics
Table 32-17. Endurance and data retention.
Symbol Parameter
Condition
Flash
Write/erase cycles
Data retention
25°C
85°C
25°C
55°C
EEPROM
Write/erase cycles
Data retention
25°C
85°C
25°C
55°C
Table 32-18. Programming time.
Symbol Parameter
Chip Erase
Condition
128KB flash, EEPROM (2) and SRAM erase
64KB flash, EEPROM (2) and SRAM erase
32KB flash, EEPROM (2) and SRAM erase
16KB flash, EEPROM (2) and SRAM erase
Page erase
Flash
Page write
Atomic page erase and write
Page erase
EEPROM
Page write
Atomic page erase and write
Notes: 1. Programming is timed from the 2MHz internal oscillator.
2. EEPROM is not erased if the EESAVE fuse is programmed.
XMEGA D4
Min.
Typ.
Max. Units
10K
Cycle
10K
100
Year
25
80K
Cycle
30K
100
Year
25
Min.
Typ. (1)
75
55
50
45
4
4
8
4
4
8
Max. Units
ms
74
8135L–AVR–06/12