BAS101 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BAS101 Datasheet PDF : 11 Pages
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BAS101; BAS101S
High-voltage switching diodes
Rev. 02 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
BAS101
SOT23
BAS101S
SOT23
JEITA
-
-
Configuration
single
dual series
1.2 Features
High switching speed: trr ≤ 50 ns
Low leakage current
Repetitive peak reverse voltage:
VRRM ≤ 300 V
1.3 Applications
High-speed switching
High-voltage switching
Low capacitance: Cd ≤ 2 pF
Reverse voltage: VR ≤ 300 V
Small SMD plastic package
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IF
forward current
IR
reverse current
VR
reverse voltage
trr
reverse recovery time
Conditions
Min Typ
-
-
VR = 250 V
-
-
-
-
[1] -
-
[1] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.
Max
200
150
300
50
Unit
mA
nA
V
ns
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