BAS101 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BAS101 Datasheet PDF : 11 Pages
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NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
500
IF
(mA)
400
mhc618
300
200
100
(1) (2) (3)
0
0
0.5
1 VF (V) 1.5
(1) Tamb = 150 °C
(2) Tamb = 75 °C
(3) Tamb = 25 °C
Fig 1. Forward current as a function of forward
voltage; typical values
102
IR
(μA)
10
mhc619
1
10−1
10−2
0
40
80
120
160
200
Tj (°C)
Fig 3.
VR = 300 V
Reverse current as a function of junction
temperature; typical values
102
IFSM
(A)
10
mbg703
1
10−1
1
10
102
103
104
tp (μs)
Based on square wave currents
Tj = 25 °C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
0.42
Cd
(pF)
mhc621
0.38
0.34
0.3
0
10
20
30
40
VR (V)
Fig 4.
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
BAS101_BAS101S_2
Product data sheet
Rev. 02 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
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