DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ESDALC6V1-1M2(2007) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
ESDALC6V1-1M2
(Rev.:2007)
ST-Microelectronics
STMicroelectronics 
ESDALC6V1-1M2 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
ESDALC6V1-1M2
Characteristics
Figure 4.
Clamping voltage versus peak
pulse current, rectangular
waveform
IPP(A)
100.0
8/20 µs
Tj initial =25 °C
10.0
Figure 5. Forward voltage drop versus peak
forward current (typical values)
IFM(A)
1.E+00
1.E-01
1.E-02
Tj =25 °C
Tj =125 °C
Tj =-40 °C
1.0
1.E-03
VCL(V)
VFM(V)
0.1
1.E-04
0
5
10
15
20
25
30
35
40
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 6.
C(pF)
25
20
Capacitance versus reverse applied Figure 7.
voltage (typical values)
Relative variation of the leakage
current versus junction
temperature (typical values)
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
IR [Tj] / IR [Tj=25°C]
100
VR =3V
15
10
10
5
VR(V)
Tj(°C)
0
1
0
1
2
3
4
5
25
50
75
100
125
150
Figure 8.
ESD response to IEC 61000-4-2
(+15 kV air discharge) on each
channel
Figure 9.
ESD response to IEC 61000-4-2
(-15 kV air discharge) on each
channel
21V
- 15V
3/10

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]