M48T251VPM View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
M48T251VPM Datasheet PDF : 24 Pages
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M48T251Y, M48T251V
Table 4. Memory AC Characteristics, M48T251V
Symbol
Parameter(1)
M48T251V–85
Unit
Min
Max
tAVAV
tRC READ Cycle Time
85
ns
tAVQV
tACC Access Time
85
ns
tELQV
tCO Chip Enable Low to Output Valid
85
ns
tGLQV
tOE Output Enable Low to Output Valid
45
ns
tELQX
tGLQX
tCOE Chip Enable or Output Enable Low to Output Transition
5
ns
tAXQX
tOH Output Hold from Address Change
5
ns
tEHQZ
tGHQZ
tOD(2) Chip Enable or Output Enable High to Output Hi-Z
35
ns
tWLQZ tODW(2) Output Hi-Z from WE
30
ns
tAVAV
tWC WRITE Cycle Time
85
ns
tWLWH tWP1(3) WRITE Enable Pulse Width
65
ns
tELEH
tWP2 Chip Enable Pulse Width
75
ns
tAVEL
tAVWL
tAW Address Setup Time
0
ns
tEHAX
tWR1(4) WRITE Recovery Time
15
ns
tWHAX
tWR2 Address Hold Time from WE
5
ns
tWHQX
tOEW Output Active from WE
5
ns
tDVEH
tDVWH
tDS(5) Data Setup Time
35
ns
tWHDX
tDH1(5) Data Hold Time from WE
0
ns
tEHDX
tDH2 Data Hold Time from CE
15
ns
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. These parameters are sampled with a 5 pF load are not 100% tested.
3. tWP is specified as the logical AND of CE and WE. tWP is measured from the latter of CE or WE going low to the earlier of CE or
WE going high.
4. tWR is a function of the latter occurring edge of WE or CE.
5. tDH and tDS are measured from the earlier of CE or WE going high.
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