DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM32F101C4U6AXXX View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM32F101C4U6AXXX Datasheet PDF : 79 Pages
First Prev 41 42 43 44 45 46 47 48 49 50 Next Last
Electrical characteristics
STM32F101x4, STM32F101x6
Table 19. High-speed external user clock characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
fHSE_ext
User external clock source
frequency(1)
1
8
25 MHz
VHSEH
VHSEL
OSC_IN input pin high level voltage
OSC_IN input pin low level voltage
0.7VDD
VSS
VDD
V
0.3VDD
tw(HSE)
tw(HSE)
tr(HSE)
tf(HSE)
Cin(HSE)
OSC_IN high or low time(1)
OSC_IN rise or fall time(1)
OSC_IN input capacitance(1)
5
ns
20
5
pF
DuCy(HSE) Duty cycle
45
55 %
IL
OSC_IN Input leakage current
VSS VIN VDD
±1 µA
1. Guaranteed by design, not tested in production.
Low-speed external user clock generated from an external source
The characteristics given in Table 20 result from tests performed using an low-speed
external clock source, and under the ambient temperature and supply voltage conditions
summarized in Table 8.
Table 20. Low-speed external user clock characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
fLSE_ext
User external clock source
frequency(1)
32.768 1000 kHz
VLSEH
VLSEL
OSC32_IN input pin high level
voltage
OSC32_IN input pin low level
voltage
0.7VDD
VSS
VDD
V
0.3VDD
tw(LSE)
tw(LSE)
OSC32_IN high or low time(1)
450
tr(LSE)
tf(LSE)
OSC32_IN rise or fall time(1)
Cin(LSE) OSC32_IN input capacitance(1)
5
DuCy(LSE) Duty cycle
30
IL
OSC32_IN Input leakage current VSS VIN VDD
1. Guaranteed by design, not tested in production.
ns
50
pF
70
%
±1 µA
42/79
Doc ID 15058 Rev 5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]