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STM32F101X6 View Datasheet(PDF) - STMicroelectronics

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STM32F101X6 Datasheet PDF : 79 Pages
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Electrical characteristics
STM32F101x4, STM32F101x6
5.3.9
5.3.10
Table 26. PLL characteristics
Symbol
Parameter
Min(1)
Value
Typ
Max(1)
Unit
tLOCK
Jitter
PLL lock time
Cycle-to-cycle jitter
200
µs
300
ps
1. Based on device characterization, not tested in production.
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 85 °C unless otherwise specified.
Table 27. Flash memory characteristics
Symbol
Parameter
Conditions
Min(1) Typ Max(1) Unit
tprog 16-bit programming time
TA = –40 to +85 °C
40 52.5 70 µs
tERASE Page (1 KB) erase time
TA = –40 to +85 °C
20
40 ms
tME Mass erase time
TA = –40 to +85 °C
20
40 ms
Read mode
fHCLK = 36 MHz with 1 wait
state, VDD = 3.3 V
20 mA
IDD Supply current
Write / Erase modes
fHCLK = 36 MHz, VDD = 3.3 V
5 mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50 µA
Vprog Programming voltage
2
3.6
V
1. Guaranteed by design, not tested in production.
Table 28.
Symbol
Flash memory endurance and data retention
Parameter
Conditions
Min(1)
Value
Typ
NEND Endurance
tRET Data retention
TA = –40 °C to 85 °C
10
TA = 85 °C, 1 kcycle(2)
30
TA = 55 °C, 10 kcycle(2)
20
1. Based on characterization not tested in production.
2. Cycling performed over the whole temperature range.
Max
Unit
kcycles
Years
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
48/79
Doc ID 15058 Rev 5

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