NXP Semiconductors
LPC2364/65/66/67/68
Single-chip 16-bit/32-bit microcontrollers
11.4 Flash memory
Table 13. Dynamic characteristics of flash
Tamb = 40 C to +85 C for standard devices, 40 C to +125 C for LPC2364HBD only, unless otherwise specified;
VDD(3V3) = 3.0 V to 3.6 V; all voltages are measured with respect to ground.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Nendu
tret
endurance
retention time
powered; 100 cycles
unpowered; 100 cycles
[1] 10000
10
20
100000 -
-
-
-
-
cycles
years
years
ter
erase time
sector or multiple
95
100
105
ms
consecutive sectors
tprog
programming time
[2] 0.95
1
1.05
ms
[1] Number of program/erase cycles.
[2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes.
LPC2364_65_66_67_68
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7.1 — 16 October 2013
© NXP B.V. 2013. All rights reserved.
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