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M24M01-RMN6G View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
M24M01-RMN6G
ST-Microelectronics
STMicroelectronics 
M24M01-RMN6G Datasheet PDF : 37 Pages
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M24M01-R die description
8
M24M01-R die description
M24M01-R, M24M01-W, M24M01-HR
Caution:
As EEPROM cells loose their charge (and so their binary value) when exposed to ultra violet
(UV) light, EEPROM dice delivered in wafer form by STMicroelectronics must never be
exposed to UV light.
Product M24M01-A
Wafer size
Die identification
Die Layout
Die size (X × Y)
Scribe line
Pad opening
DI
Pads
203 mm (8 inches)
M24M01, processed in the Rousset fab
2085 × 3605 µm (including scribe line)
80.0 × 80.0 µm
90 × 90 µm
Die identification (at the position shown in Figure 17)
Pad contacts (at the positions shown in Figure 17 and
Table 18)
Figure 17. M24M01-R die plot
E0
E1
VCC
WC
Y
X
E2
VSS
Die identification: M24M01
1. Refer to Table 18: Pad coordinates for the pad locations.
SCL
SDA
ai15446
30/37
Doc ID 12943 Rev 7

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