M25P10-AVMP6GX View Datasheet(PDF) - Numonyx -> Micron
Part Name
Description
Manufacturer
M25P10-AVMP6GX Datasheet PDF : 51 Pages
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DC and AC parameters
M25P10-A
Table 15. DC characteristics (device grade 3)(1)
Symbol
Parameter
Test condition (in addition to
those in Table 10)
Min(2)
Max(2) Unit
ILI Input Leakage current
ILO Output Leakage current
ICC1 Standby current
S = VCC, VIN = VSS or VCC
ICC2 Deep Power-down current
S = VCC, VIN = VSS or VCC
C = 0.1VCC / 0.9.VCC at 25 MHz,
Q = open
ICC3 Operating current (READ)
C = 0.1VCC / 0.9.VCC at 20 MHz,
Q = open
± 2 µA
± 2 µA
100 µA
50 µA
8
mA
4
mA
ICC4 Operating current (PP)
S = VCC
ICC5 Operating current (WRSR)
S = VCC
ICC6 Operating current (SE)
S = VCC
ICC7 Operating current (BE)
S = VCC
VIL Input Low voltage
VIH Input High voltage
VOL Output Low voltage
IOL = 1.6 mA
VOH Output High voltage
IOH = –100 μA
1. Only for products with process technology code X.
2. Preliminary data.
15 mA
15 mA
15 mA
15 mA
–0.5 0.3VCC V
0.7VCC VCC+0.4 V
0.4
V
VCC–0.2
V
Table 16. Instruction times (device grade 6)
Test conditions specified in Table 10 and Table 12
Symbol Alt.
Parameter
Min
Typ
Max Unit
tW
tPP(1)
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
5
15
ms
1.4
0.4+
5
ms
n*1/256(2)
tSE
Sector Erase cycle time
0.65
3
s
tBE
Bulk Erase cycle time
1.7
6
s
1. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤n ≤
256).
2. tPP=2μs+8μs*[int(n-1)/2+1]+4μs*[int(n-1)/2]+2μs, in products with process technology code X and Y.
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