M29W128GL60N6E View Datasheet(PDF) - Numonyx -> Micron

Part Name

Description

Manufacturer

M29W128GL60N6E

128 Mbit (16 Mb x 8 or 8 Mbx 16, page, uniform block) 3 V supply Flash memory

Numonyx -> Micron 

Command interface

M29W128GH, M29W128GL

Table 12. Fast Program commands, 8-bit mode

Bus Write operations(1)

Command

1st

2nd

3rd

4th

5th

6th

7th

8th

9th

Add Data Add Data Add Data Add Data Add Data Add Data Add Data Add Data Add Data

Write to

Buffer

Program

N+5 AAA AA 555

55

BAd 25

BAd

N(2) PA(3) PD

WBL

(4)

PD

Write to

Buffer

Program

Confirm

1

BAd

(5)

29

Buffered

Program

Abort and

Reset

3 AAA AA 555 55 AAA F0

Unlock

Bypass

3 AAA AA 555 55 AAA 20

Unlock

Bypass

Program

2 X A0 PA PD

Unlock

Bypass

Block

Erase

2+ X 80 BAd 30

Unlock

Bypass

2 X 80 X 10

Chip Erase

Unlock

Bypass

Write to

Buffer

Program

N+3 BAd 25 BAd N(2)

PA

(3)

PD

WBL

(6)

PD

Unlock

Bypass

Reset

2 X 90 X 00

1. X Don’t care, PA Program Address, PD Program Data, BAd Any address in the Block, WBL Write Buffer Location. All values in the table are in

hexadecimal.

2. The maximum number of cycles in the command sequence is 68. N+1 is the number of bytes to be programmed during the Write to Buffer

Program operation.

3. Each buffer has the same A22-A5 addresses. A0-A4 and A-1 are used to select a byte within the N+1 byte page.

4. The 6th cycle has to be issued N time. WBL scans the word inside the page.

5. BAd must be identical to the address loaded during the Write to Buffer Program 3rd and 4th cycles.

6. The 4th cycle has to be issued N time. WBL scans the word inside the page.

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